ROHM RQ3E080BNTB
Manufacturer No:
RQ3E080BNTB
Manufacturer:
ROHM
Package:
8-PowerVDFN
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 15.2m ? @ 8A, 10V ±20V 660pF @ 15V 14.5nC @ 10V 30V 8-PowerVDFN
Quantity:
In Stock :4567
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RQ3E080BNTB Information
ROHM RQ3E080BNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ3E080BNTB.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2014
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F5
Download datasheets and manufacturer documentation for ROHM RQ3E080BNTB.
RQ3E080BNTB Overview
A device's maximum input capacitance is 660pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 8A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 32A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
RQ3E080BNTB Features
a continuous drain current (ID) of 8A
based on its rated peak drain current 32A.
a 30V drain to source voltage (Vdss)
RQ3E080BNTB Applications
There are a lot of ROHM Semiconductor
RQ3E080BNTB applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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