ROHM RQ3C150BCTB
Manufacturer No:
RQ3C150BCTB
Manufacturer:
ROHM
Package:
8-PowerVDFN
Description:
MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 6.7m ? @ 15A, 4.5V ±8V 4800pF @ 10V 60nC @ 4.5V 20V 8-PowerVDFN
Quantity:
In Stock :7660
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RQ3C150BCTB Information
ROHM RQ3C150BCTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ3C150BCTB.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- Type
- Parameter
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- S-PDSO-F5
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 20W Tc
Download datasheets and manufacturer documentation for ROHM RQ3C150BCTB.
RQ3C150BCTB Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 33 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4800pF @ 10V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 15A.Peak drain current is 60A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 20V.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (4.5V), this device contributes to a reduction in overall power consumption.
RQ3C150BCTB Features
the avalanche energy rating (Eas) is 33 mJ
based on its rated peak drain current 60A.
a 20V drain to source voltage (Vdss)
RQ3C150BCTB Applications
There are a lot of ROHM Semiconductor
RQ3C150BCTB applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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