ROHM RP1E050RPTR
Manufacturer No:
RP1E050RPTR
Manufacturer:
ROHM
Package:
SMD/SMT
Description:
Tape & Reel (TR) 30V SMD/SMT
Quantity:
In Stock :8179
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RP1E050RPTR Information
ROHM RP1E050RPTR technical specifications, attributes, parameters and parts with similar specifications to ROHM RP1E050RPTR.
- Type
- Parameter
- Mount
- Surface Mount
- Package / Case
- SMD/SMT
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Packaging
- Tape & Reel (TR)
- Published
- 2010
- JESD-609 Code
- e2
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Terminal Finish
- TIN COPPER
- Max Operating Temperature
- 150°C
- Subcategory
- Other Transistors
- Max Power Dissipation
- 2W
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 10
Download datasheets and manufacturer documentation for ROHM RP1E050RPTR.
RP1E050RPTR Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 5A.With a drain-source breakdown voltage of -30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -30V.5A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 20A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 58mOhm exists between the drain and source.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.
RP1E050RPTR Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of -30V voltage
based on its rated peak drain current 20A.
single MOSFETs transistor is 58mOhm
a 30V drain to source voltage (Vdss)
RP1E050RPTR Applications
There are a lot of ROHM Semiconductor
RP1E050RPTR applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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In-stock SKU
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