ROHM RJU002N06T106
Manufacturer No:
RJU002N06T106
Manufacturer:
ROHM
Package:
SC-70, SOT-323
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.3 ? @ 200mA, 4.5V ±12V 18pF @ 10V SC-70, SOT-323
Quantity:
In Stock :4781
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Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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RJU002N06T106 Information
ROHM RJU002N06T106 technical specifications, attributes, parameters and parts with similar specifications to ROHM RJU002N06T106.
- Type
- Parameter
- Factory Lead Time
- 7 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-70, SOT-323
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2009
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Resistance
- 3.1Ohm
- Terminal Finish
- TIN SILVER COPPER
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 60V
- Technology
- MOSFET (Metal Oxide)
Download datasheets and manufacturer documentation for ROHM RJU002N06T106.
RJU002N06T106 Overview
A device's maximal input capacitance is 18pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 200mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 12 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.This device reduces its overall power consumption by using drive voltage (2.5V 4.5V).
RJU002N06T106 Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12 ns
RJU002N06T106 Applications
There are a lot of ROHM Semiconductor
RJU002N06T106 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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