

Renesas RJK60S7DPP-E0#T2
Manufacturer No:
RJK60S7DPP-E0#T2
Manufacturer:
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Tube 125m ? @ 15A, 10V +30V, -20V 2300pF @ 25V 39nC @ 10V 600V TO-220-3 Full Pack
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RJK60S7DPP-E0#T2 information
Renesas RJK60S7DPP-E0#T2 technical specifications, attributes, parameters and parts with similar specifications to Renesas RJK60S7DPP-E0#T2.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Number of Pins
- 3
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Published
- 2012
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
- Configuration
- Single
- Power Dissipation-Max
- 34.7W Tc
- Turn On Delay Time
- 27 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 125m ? @ 15A, 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 2300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 30A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 39nC @ 10V
- Rise Time
- 28ns
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- +30V, -20V
- Fall Time (Typ)
- 9 ns
- Turn-Off Delay Time
- 55 ns
- Continuous Drain Current (ID)
- 30A
- Gate to Source Voltage (Vgs)
- 30V
- FET Feature
- Super Junction
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for Renesas RJK60S7DPP-E0#T2.
ConflictMineralStatement:
RJK60S7DPP-E0#T2 Overview
A device's maximal input capacitance is 2300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 55 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 27 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
RJK60S7DPP-E0#T2 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 55 ns
a 600V drain to source voltage (Vdss)
RJK60S7DPP-E0#T2 Applications
There are a lot of Renesas Electronics America
RJK60S7DPP-E0#T2 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
User Guide
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