Rochester RJK60S4DPP-E0#T2

Manufacturer No:

RJK60S4DPP-E0#T2

Manufacturer:

Rochester

Package:

TO-220-3 Full Pack

Description:

MOSFET (Metal Oxide) N-Channel Tube 290mOhm @ 8A, 10V 988pF @ 25V 18nC @ 10V 600V TO-220-3 Full Pack

Quantity:

In Stock :1256

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Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

RJK60S4DPP-E0#T2 Information

Rochester RJK60S4DPP-E0#T2 technical specifications, attributes, parameters and parts with similar specifications to Rochester RJK60S4DPP-E0#T2.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3 Full Pack

Supplier Device Package
TO-220FP

Operating Temperature
150°C TJ

Packaging
Tube

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
MOSFET (Metal Oxide)

Power Dissipation-Max
29.9W Tc

FET Type
N-Channel

Type
Parameter

Rds On (Max) @ Id, Vgs
290mOhm @ 8A, 10V

Input Capacitance (Ciss) (Max) @ Vds
988pF @ 25V

Current - Continuous Drain (Id) @ 25°C
16A Tc

Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V

Drain to Source Voltage (Vdss)
600V

FET Feature
Super Junction

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Rochester RJK60S4DPP-E0#T2.

Datasheets:

rochesterelectronicsllc-rjk60s4dppe0t2-datasheets-4716.pdf

RJK60S4DPP-E0#T2 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 988pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.