Renesas RJK5013DPP-E0#T2
Renesas RJK5013DPP-E0#T2

Renesas RJK5013DPP-E0#T2

Manufacturer No:

RJK5013DPP-E0#T2

Manufacturer:

Renesas

Package:

TO-220-3 Full Pack

Description:

MOSFET (Metal Oxide) N-Channel Tube 465m ? @ 7A, 10V ±30V 1450pF @ 25V 38nC @ 10V 500V TO-220-3 Full Pack

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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RJK5013DPP-E0#T2 information

Renesas RJK5013DPP-E0#T2 technical specifications, attributes, parameters and parts with similar specifications to Renesas RJK5013DPP-E0#T2.

  • Type
  • Parameter
  • Factory Lead Time
  • 16 Weeks
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-220-3 Full Pack
  • Number of Pins
  • 3
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tube
  • Published
  • 2012
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • ECCN Code
  • EAR99
  • Subcategory
  • FET General Purpose Powers
  • Technology
  • MOSFET (Metal Oxide)
  • Pin Count
  • 3
  • Configuration
  • Single
  • Power Dissipation-Max
  • 30W Tc
  • Turn On Delay Time
  • 34 ns
  • FET Type
  • N-Channel
  • Rds On (Max) @ Id, Vgs
  • 465m ? @ 7A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds
  • 1450pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
  • 14A Ta
  • Gate Charge (Qg) (Max) @ Vgs
  • 38nC @ 10V
  • Rise Time
  • 24ns
  • Drain to Source Voltage (Vdss)
  • 500V
  • Vgs (Max)
  • ±30V
  • Fall Time (Typ)
  • 16 ns
  • Turn-Off Delay Time
  • 86 ns
  • Continuous Drain Current (ID)
  • 14A
  • Gate to Source Voltage (Vgs)
  • 30V
  • Radiation Hardening
  • No
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for Renesas RJK5013DPP-E0#T2.

Datasheets:

ConflictMineralStatement:

RJK5013DPP-E0#T2 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1450pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 86 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 34 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

RJK5013DPP-E0#T2 Features


a continuous drain current (ID) of 14A
the turn-off delay time is 86 ns
a 500V drain to source voltage (Vdss)


RJK5013DPP-E0#T2 Applications


There are a lot of Renesas Electronics America
RJK5013DPP-E0#T2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

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Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

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Step6：Packaging Box

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