Renesas RJK1002DPN-A0#T2

Manufacturer No:

RJK1002DPN-A0#T2

Manufacturer:

Renesas

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel 7.6m ? @ 35A, 10V ±20V 6450pF @ 10V 94nC @ 10V 100V TO-220-3

Quantity:

In Stock :3183

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

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SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

RJK1002DPN-A0#T2 Information

Renesas RJK1002DPN-A0#T2 technical specifications, attributes, parameters and parts with similar specifications to Renesas RJK1002DPN-A0#T2.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3

Operating Temperature
150°C

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
MOSFET (Metal Oxide)

Power Dissipation-Max
150W Ta

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
7.6m ? @ 35A, 10V

Vgs(th) (Max) @ Id
4V @ 1mA

Type
Parameter

Input Capacitance (Ciss) (Max) @ Vds
6450pF @ 10V

Current - Continuous Drain (Id) @ 25°C
70A Ta

Gate Charge (Qg) (Max) @ Vgs
94nC @ 10V

Drain to Source Voltage (Vdss)
100V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Renesas RJK1002DPN-A0#T2.

Datasheets:

renesaselectronicsamerica-rjk1002dpna0t2-datasheets-5769.pdf

RJK1002DPN-A0#T2 Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6450pF @ 10V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.