Renesas RJK0328DPB-01#J0
Manufacturer No:
RJK0328DPB-01#J0
Manufacturer:
Package:
SC-100, SOT-669
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.1m ? @ 30A, 10V ±20V 6380pF @ 10V 42nC @ 4.5V 30V SC-100, SOT-669
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RJK0328DPB-01#J0 information
Renesas RJK0328DPB-01#J0 technical specifications, attributes, parameters and parts with similar specifications to Renesas RJK0328DPB-01#J0.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Contact Plating
- Gold
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Number of Pins
- 5
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2011
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- JESD-30 Code
- R-PSSO-G4
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 65W Tc
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 65W
- Turn On Delay Time
- 9.4 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 2.1m ? @ 30A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 6380pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 60A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 42nC @ 4.5V
- Rise Time
- 4.3ns
- Drain to Source Voltage (Vdss)
- 30V
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 7.3 ns
- Turn-Off Delay Time
- 61.5 ns
- Continuous Drain Current (ID)
- 60A
- Gate to Source Voltage (Vgs)
- 20V
- Drain-source On Resistance-Max
- 0.0029Ohm
- Pulsed Drain Current-Max (IDM)
- 240A
- DS Breakdown Voltage-Min
- 30V
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for Renesas RJK0328DPB-01#J0.
ConflictMineralStatement:
RJK0328DPB-01#J0 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6380pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 61.5 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 240A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.4 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
RJK0328DPB-01#J0 Features
a continuous drain current (ID) of 60A
the turn-off delay time is 61.5 ns
based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)
RJK0328DPB-01#J0 Applications
There are a lot of Renesas Electronics America
RJK0328DPB-01#J0 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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