Harris RJH6678

Manufacturer No:

RJH6678

Manufacturer:

Harris

Package:

TO-218-3 Isolated Tab, TO-218AC

Description:

NPN -65°C ~ 150°C (TJ) 100?A TO-218-3 Isolated Tab, TO-218AC Through Hole

Quantity:

Delivery:

Payment:

In Stock :Available

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RJH6678 information

Harris RJH6678 technical specifications, attributes, parameters and parts with similar specifications to Harris RJH6678.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-218-3 Isolated Tab, TO-218AC

Supplier Device Package
TO-218 Isolated

Mfr
Harris Corporation

Package
Bulk

Product Status
Active

Operating Temperature
-65°C ~ 150°C (TJ)

Power - Max
175 W

Transistor Type
NPN

DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 15A, 3V

Current - Collector Cutoff (Max)
100?A

Vce Saturation (Max) @ Ib, Ic
1.5V @ 3A, 15A

Voltage - Collector Emitter Breakdown (Max)
400 V

Current - Collector (Ic) (Max)
15 A

Frequency - Transition
50MHz

Download datasheets and manufacturer documentation for Harris RJH6678.

RJH6678 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 8 @ 15A, 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 3A, 15A.TO-218 Isolated is the supplier device package for this product.This device displays a 400 V maximum voltage - Collector Emitter Breakdown.

RJH6678 Features

the DC current gain for this device is 8 @ 15A, 3V
the vce saturation(Max) is 1.5V @ 3A, 15A
the supplier device package of TO-218 Isolated

RJH6678 Applications

There are a lot of Harris Corporation
RJH6678 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

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