Renesas RJH60D1DPP-A0#T2
Manufacturer No:
RJH60D1DPP-A0#T2
Manufacturer:
Renesas
Package:
Description:
IGBT 600V 10A Power Switching
Quantity:
In Stock :5156
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RJH60D1DPP-A0#T2 Information
Renesas RJH60D1DPP-A0#T2 technical specifications, attributes, parameters and parts with similar specifications to Renesas RJH60D1DPP-A0#T2.
- Type
- Parameter
- Pkg. Type
- TO-220FPA
- Lead Count (#)
- 3
- Carrier Type
- Tube
- Moisture Sensitivity Level (MSL)
- 1
- Pb (Lead) Free
- Yes
- Price (USD) | 1ku
- 3.7575
- Application
- Inverter
- Channels (#)
- 1
- Configuration
- Built-in FRD
- FRD Vf (V)
- 1.4
- Type
- Parameter
- FRD trr (ns)
- 70
- IC @100 °C (A)
- 10
- IC @25 °C (A)
- 20
- IH
- No
- Ic (Peak) (A)
- 40
- Inverter
- Yes
- Lead Compliant
- No
- MOQ
- 1
- Mounting Type
- Through Hole
- PFC
- No
Download datasheets and manufacturer documentation for Renesas RJH60D1DPP-A0#T2.
Renesas' RJH60D1DPP-A0 600V, 10A insulated-gate bipolar transistors (IGBT) featuring trench gate and thin wafer technology, built-in fast recovery diode (100ns typ.) in one package, and low collector to emitter saturation voltage can be used for power switching applications.
- Trench gate and thin wafer technology
- Built-in fast recovery diode (100ns typ.) in one package
- Low collector to emitter saturation voltage
VCE(sat) = 1.9V typ. (at IC = 10A, VGE = 15V, Tc = 25 °C) - High-Speed switching
tf = 75ns typ. (at Vcc = 300V, VGE = 15V, Ic = 10A, Rg = 5Ω, inductive load) - Short circuit withstands time (5µs typ.)
- Applications: Inverter
- Quality grade: Standard
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12.28 M
Listed Part Number
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