ROHM RHU003N03T106
Manufacturer No:
RHU003N03T106
Manufacturer:
ROHM
Package:
SC-70, SOT-323
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.2 ? @ 300mA, 10V ±20V 20pF @ 10V SC-70, SOT-323
Quantity:
In Stock :2796
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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RHU003N03T106 Information
ROHM RHU003N03T106 technical specifications, attributes, parameters and parts with similar specifications to ROHM RHU003N03T106.
- Type
- Parameter
- Factory Lead Time
- 7 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-70, SOT-323
- Number of Pins
- 3
- Packaging
- Tape & Reel (TR)
- Published
- 2006
- JESD-609 Code
- e1
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Resistance
- 800mOhm
- Terminal Finish
- TIN SILVER COPPER
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
Download datasheets and manufacturer documentation for ROHM RHU003N03T106.
RHU003N03T106 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 20pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 300mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 9 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4V 10V), this device helps reduce its overall power consumption.
RHU003N03T106 Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 9 ns
RHU003N03T106 Applications
There are a lot of ROHM Semiconductor
RHU003N03T106 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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