ONSEMI RFP3055
Manufacturer No:
RFP3055
Manufacturer:
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 150mOhm @ 12A, 10V ±20V 300pF @ 25V 23nC @ 20V 60V TO-220-3
Quantity:


In Stock :4611
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Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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RFQ (REQUEST FOR QUOTATIONS)Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RFP3055 Information
ONSEMI RFP3055 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI RFP3055.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220-3
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Published
- 2002
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 53W Tc
- Type
- Parameter
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 150mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 12A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 23nC @ 20V
- Drain to Source Voltage (Vdss)
- 60V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±20V
Download datasheets and manufacturer documentation for ONSEMI RFP3055.
RFP3055 Description
RFP3055 is a type of N-Channel enhancement-mode silicon gate power field effect transistor provided by ON Semiconductor. It is specifically designed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is well suited for a wide range of applications including switching regulators, switching converters, motor drivers, relay drivers, and more.
RFP3055 Features
Low RDS (on)
UIS rating curve
Available in the TO-251AA package
Operating temperature of 175oC
Temperature compensating PSPICE? model
RFP3055 Applications
Switching regulators
Switching converters
Motor drivers
Relay drivers
Drivers for high power bipolar switching transistors
RFP3055 Relevant information
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