ONSEMI RFP22N10
Manufacturer No:
RFP22N10
Manufacturer:
ONSEMI
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 80mOhm @ 22A, 10V ±20V 150nC @ 20V 100V TO-220-3
Quantity:
In Stock :9195
Looking for price or availability? Send us an RFQ and our sales team will respond quickly.
Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Payment
We support multiple secure payment methods including PayPal, Visa, MasterCard, and American Express. All transactions are protected with advanced encryption to ensure secure and reliable payments.
Authenticity Guarantee
All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.
Quality Assurance
Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.
User Guide
Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
MEANS OF PAYMENTFor your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.
RFQ (REQUEST FOR QUOTATIONS)Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RFP22N10 Information
ONSEMI RFP22N10 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI RFP22N10.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220-3
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Published
- 2002
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 100W Tc
- Type
- Parameter
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 80mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Current - Continuous Drain (Id) @ 25°C
- 22A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 150nC @ 20V
- Drain to Source Voltage (Vdss)
- 100V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±20V
Download datasheets and manufacturer documentation for ONSEMI RFP22N10.
RFP22N10 Description
The RFP22N10 is an N-Channel enhancement mode silicon gate power field effect transistor intended primarily for use with logic level (5V) driving sources in applications such as programmable controllers, automobile switching, and solenoid drivers. This capability is achieved using a unique gate oxide design that delivers full-rated conduction at gate biases ranging from 3V to 5V, allowing genuine on-off power management straight from logic circuit supply voltages.
RFP22N10 Features
12A, 100V
rDS(ON)= 0.200?
Design Optimized for 5V Gate Drive
Can be Driven Directly from CMOS, NMOS, and TTL Circuits
Compatible with Automotive Drive Requirements
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
RFP22N10 Application
Other Industrial
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
