Harris RFD4N06L
Manufacturer No:
RFD4N06L
Manufacturer:
Harris
Package:
TO-251-3 Short Leads, IPak, TO-251AA
Description:
MOSFET (Metal Oxide) N-Channel 600mOhm @ 1A, 5V ±10V 8 nC @ 10 V 60 V TO-251-3 Short Leads, IPak, TO-251AA
Quantity:
In Stock :8632
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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User Guide
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PURCHASE
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RFD4N06L Information
Harris RFD4N06L technical specifications, attributes, parameters and parts with similar specifications to Harris RFD4N06L.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package
- I-Pak
- Mfr
- Harris Corporation
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Product Status
- Active
- Package
- Bulk
- Power Dissipation (Max)
- 30W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 600mOhm @ 1A, 5V
- Vgs(th) (Max) @ Id
- 2.5V @ 250?A
- Current - Continuous Drain (Id) @ 25°C
- 4A (Tc)
- Gate Charge (Qg) (Max) @ Vgs
- 8 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 60 V
- Vgs (Max)
- ±10V
Download datasheets and manufacturer documentation for Harris RFD4N06L.
RFD4N06L Overview
The transistor must receive a 60 V drain to source voltage (Vdss) in order to function.
RFD4N06L Features
a 60 V drain to source voltage (Vdss)
RFD4N06L Applications
There are a lot of Harris Corporation
RFD4N06L applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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12.28 M
Listed Part Number
3,000+
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15,000+
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