ROHM RF4G100BGTCR

Manufacturer No:

RF4G100BGTCR

Manufacturer:

ROHM

Package:

8-PowerUDFN

Description:

MOSFET (Metal Oxide) N-Channel 14.2mOhm @ 10A, 10V ±20V 530 pF @ 20 V 10.6 nC @ 10 V 40 V 8-PowerUDFN

Quantity:

In Stock :2648

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

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RFQ (REQUEST FOR QUOTATIONS)

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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Step2：Desiccant Protection

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

RF4G100BGTCR Information

ROHM RF4G100BGTCR technical specifications, attributes, parameters and parts with similar specifications to ROHM RF4G100BGTCR.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
8-PowerUDFN

Supplier Device Package
DFN2020-8S

Mfr
Rohm Semiconductor

Package
Digi-Reel?

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V

Power Dissipation (Max)
2W (Ta)

Operating Temperature
150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
14.2mOhm @ 10A, 10V

Vgs(th) (Max) @ Id
2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 20 V

Current - Continuous Drain (Id) @ 25°C
10A (Ta)

Gate Charge (Qg) (Max) @ Vgs
10.6 nC @ 10 V

Drain to Source Voltage (Vdss)
40 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM RF4G100BGTCR.

RF4G100BGTCR Overview

A device's maximal input capacitance is 530 pF @ 20 V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 40 V drain to source voltage (Vdss).