ROHM RF4E110BNTR
Manufacturer No:
RF4E110BNTR
Manufacturer:
ROHM
Package:
8-PowerUDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 11.1m ? @ 11A, 10V ±20V 1200pF @ 15V 24nC @ 10V 30V 8-PowerUDFN
Quantity:
In Stock :6369
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RF4E110BNTR Information
ROHM RF4E110BNTR technical specifications, attributes, parameters and parts with similar specifications to ROHM RF4E110BNTR.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerUDFN
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2015
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- NO LEAD
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- S-PDSO-N6
Download datasheets and manufacturer documentation for ROHM RF4E110BNTR.
RF4E110BNTR Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1200pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 11A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 43 ns.Peak drain current for this device is 44A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
RF4E110BNTR Features
a continuous drain current (ID) of 11A
the turn-off delay time is 43 ns
based on its rated peak drain current 44A.
a 30V drain to source voltage (Vdss)
RF4E110BNTR Applications
There are a lot of ROHM Semiconductor
RF4E110BNTR applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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