ROHM RF4E100AJTCR
Manufacturer No:
RF4E100AJTCR
Manufacturer:
ROHM
Package:
8-PowerUDFN
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 12.4m ? @ 10A, 4.5V ±12V 1460pF @ 15V 13nC @ 4.5V 30V 8-PowerUDFN
Quantity:
In Stock :6961
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RF4E100AJTCR Information
ROHM RF4E100AJTCR technical specifications, attributes, parameters and parts with similar specifications to ROHM RF4E100AJTCR.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerUDFN
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2015
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- NO LEAD
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- S-PDSO-N6
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ROHM RF4E100AJTCR.
Datasheets:
RF4E100AJTCR Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 6.7 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1460pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 10A.Pulsed drain current is maximum rated peak drain current 36A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V volts (4.5V).
RF4E100AJTCR Features
the avalanche energy rating (Eas) is 6.7 mJ
based on its rated peak drain current 36A.
a 30V drain to source voltage (Vdss)
RF4E100AJTCR Applications
There are a lot of ROHM Semiconductor
RF4E100AJTCR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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