ROHM RF4E070GNTR
Manufacturer No:
RF4E070GNTR
Manufacturer:
ROHM
Package:
8-PowerUDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 21.4m ? @ 7A, 10V ±20V 220pF @ 15V 4.8nC @ 10V 8-PowerUDFN
Quantity:
In Stock :9412
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RF4E070GNTR Information
ROHM RF4E070GNTR technical specifications, attributes, parameters and parts with similar specifications to ROHM RF4E070GNTR.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerUDFN
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2013
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- NO LEAD
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 10
- JESD-30 Code
- S-PDSO-N6
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ROHM RF4E070GNTR.
RF4E070GNTR Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 220pF @ 15V.This device conducts a continuous drain current (ID) of 7A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 7A.When the device is turned off, a turn-off delay time of 16.5 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 5.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
RF4E070GNTR Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 16.5 ns
RF4E070GNTR Applications
There are a lot of ROHM Semiconductor
RF4E070GNTR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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