ROHM RF4E070BNTR
Manufacturer No:
RF4E070BNTR
Manufacturer:
ROHM
Package:
8-PowerUDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 28.6m ? @ 7A, 10V ±20V 410pF @ 15V 8.9nC @ 10V 8-PowerUDFN
Quantity:
In Stock :5361
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RF4E070BNTR Information
ROHM RF4E070BNTR technical specifications, attributes, parameters and parts with similar specifications to ROHM RF4E070BNTR.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerUDFN
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2013
- Part Status
- Not For New Designs
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- NO LEAD
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 10
- JESD-30 Code
- S-PDSO-N6
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ROHM RF4E070BNTR.
RF4E070BNTR Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 410pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 7A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
RF4E070BNTR Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 23 ns
RF4E070BNTR Applications
There are a lot of ROHM Semiconductor
RF4E070BNTR applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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