ROHM RF4C100BCTCR
Manufacturer No:
RF4C100BCTCR
Manufacturer:
ROHM
Package:
8-PowerUDFN
Description:
MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 15.6m ? @ 10A, 4.5V ±8V 1660pF @ 10V 23.5nC @ 4.5V 20V 8-PowerUDFN
Quantity:
In Stock :2804
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RF4C100BCTCR Information
ROHM RF4C100BCTCR technical specifications, attributes, parameters and parts with similar specifications to ROHM RF4C100BCTCR.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerUDFN
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- Type
- Parameter
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- NO LEAD
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- S-PDSO-N6
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
Download datasheets and manufacturer documentation for ROHM RF4C100BCTCR.
RF4C100BCTCR Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 15.2 mJ.A device's maximum input capacitance is 1660pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 10A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 36A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.
RF4C100BCTCR Features
the avalanche energy rating (Eas) is 15.2 mJ
based on its rated peak drain current 36A.
a 20V drain to source voltage (Vdss)
RF4C100BCTCR Applications
There are a lot of ROHM Semiconductor
RF4C100BCTCR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
