ROHM RDR005N25TL
Manufacturer No:
RDR005N25TL
Manufacturer:
ROHM
Package:
SC-96
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8.8 ? @ 250mA, 10V ±20V 70pF @ 25V 3.5nC @ 10V SC-96
Quantity:
In Stock :3413
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RDR005N25TL Information
ROHM RDR005N25TL technical specifications, attributes, parameters and parts with similar specifications to ROHM RDR005N25TL.
- Type
- Parameter
- Factory Lead Time
- 99 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-96
- Number of Pins
- 96
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2010
- JESD-609 Code
- e3/e2
- Type
- Parameter
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- TIN/TIN COPPER
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 10
Download datasheets and manufacturer documentation for ROHM RDR005N25TL.
RDR005N25TL Overview
A device's maximum input capacitance is 70pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 500mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.Its drain current is 0.5A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 21 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4V 10V) to reduce its overall power consumption.
RDR005N25TL Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 21 ns
RDR005N25TL Applications
There are a lot of ROHM Semiconductor
RDR005N25TL applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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