ROHM RDN100N20FU6
Manufacturer No:
RDN100N20FU6
Manufacturer:
ROHM
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Bulk 360m ? @ 5A, 10V ±30V 543pF @ 10V 30nC @ 10V 200V TO-220-3 Full Pack
Quantity:
In Stock :1805
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RDN100N20FU6 Information
ROHM RDN100N20FU6 technical specifications, attributes, parameters and parts with similar specifications to ROHM RDN100N20FU6.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Number of Pins
- 3
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2006
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- Power Dissipation-Max
- 35W Tc
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 360m ? @ 5A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 543pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 10A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 30nC @ 10V
- Drain to Source Voltage (Vdss)
- 200V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±30V
Download datasheets and manufacturer documentation for ROHM RDN100N20FU6.
Datasheets:
RDN100N20FU6 Overview
A device's maximal input capacitance is 543pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
RDN100N20FU6 Features
a continuous drain current (ID) of 10A
a 200V drain to source voltage (Vdss)
RDN100N20FU6 Applications
There are a lot of ROHM Semiconductor
RDN100N20FU6 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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