RDD022N60TL-ROHM-Price, Stock & Datasheet

RDD022N60TL Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 175pF @ 25V.This device has a continuous drain current (ID) of [2A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 2A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 25 ns.A maximum pulsed drain current of 6A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

RDD022N60TL Features

a continuous drain current (ID) of 2A
the turn-off delay time is 25 ns
based on its rated peak drain current 6A.
a 600V drain to source voltage (Vdss)