ROHM RD3U040CNTL1
Manufacturer No:
RD3U040CNTL1
Manufacturer:
ROHM
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.3 ? @ 2A, 10V ±30V 350pF @ 25V 8.5nC @ 10V 250V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :3612
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RD3U040CNTL1 Information
ROHM RD3U040CNTL1 technical specifications, attributes, parameters and parts with similar specifications to ROHM RD3U040CNTL1.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Type
- Parameter
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 29W Tc
Download datasheets and manufacturer documentation for ROHM RD3U040CNTL1.
RD3U040CNTL1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1.61 mJ.The maximum input capacitance of this device is 350pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 4A.There is no pulsed drain current maximum for this device based on its rated peak drain current 16A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
RD3U040CNTL1 Features
the avalanche energy rating (Eas) is 1.61 mJ
based on its rated peak drain current 16A.
a 250V drain to source voltage (Vdss)
RD3U040CNTL1 Applications
There are a lot of ROHM Semiconductor
RD3U040CNTL1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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