ROHM RD3T050CNTL1
Manufacturer No:
RD3T050CNTL1
Manufacturer:
ROHM
Package:
DPAK-3/2
Description:
Power Field-Effect Transistor,
Quantity:
In Stock :1446
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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RD3T050CNTL1 Information
ROHM RD3T050CNTL1 technical specifications, attributes, parameters and parts with similar specifications to ROHM RD3T050CNTL1.
- Type
- Parameter
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Active
- Ihs Manufacturer
- ROHM CO LTD
- Package Description
- DPAK-3/2
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Date Of Intro
- 2017-10-05
- Samacsys Manufacturer
- ROHM Semiconductor
- Avalanche Energy Rating (Eas)
- 1.83 mJ
- Case Connection
- DRAIN
- Type
- Parameter
- Configuration
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 200 V
- Drain Current-Max (ID)
- 5 A
- Drain-source On Resistance-Max
- 0.76 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code
- TO-252
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Number of Terminals
- 2
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM RD3T050CNTL1.
RD3T050CNTL1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1.83 mJ.A device's maximum input capacitance is 330pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 5A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 20A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 200V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
RD3T050CNTL1 Features
the avalanche energy rating (Eas) is 1.83 mJ
based on its rated peak drain current 20A.
a 200V drain to source voltage (Vdss)
RD3T050CNTL1 Applications
There are a lot of ROHM Semiconductor
RD3T050CNTL1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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12.28 M
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