ROHM RD3H080SPTL1
Manufacturer No:
RD3H080SPTL1
Manufacturer:
ROHM
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 91m ? @ 8A, 10V ±20V 1000pF @ 10V 9nC @ 5V 45V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :8006
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SHIPPING COST
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RD3H080SPTL1 Information
ROHM RD3H080SPTL1 technical specifications, attributes, parameters and parts with similar specifications to ROHM RD3H080SPTL1.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Type
- Parameter
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 15W Tc
Download datasheets and manufacturer documentation for ROHM RD3H080SPTL1.
RD3H080SPTL1 Overview
A device's maximal input capacitance is 1000pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 8A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 16A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 45V.This transistor requires a 45V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 10V).
RD3H080SPTL1 Features
based on its rated peak drain current 16A.
a 45V drain to source voltage (Vdss)
RD3H080SPTL1 Applications
There are a lot of ROHM Semiconductor
RD3H080SPTL1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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