ROHM RD3G600GNTL
Manufacturer No:
RD3G600GNTL
Manufacturer:
ROHM
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3.6m ? @ 60A, 10V ±20V 3400pF @ 20V 46.5nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :3698
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RD3G600GNTL Information
ROHM RD3G600GNTL technical specifications, attributes, parameters and parts with similar specifications to ROHM RD3G600GNTL.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 40W Ta
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM RD3G600GNTL.
RD3G600GNTL Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 13 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3400pF @ 20V.A device's drain current is its maximum continuous current, and this device's drain current is 60A.A maximum pulsed drain current of 120A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 40V.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
RD3G600GNTL Features
the avalanche energy rating (Eas) is 13 mJ
based on its rated peak drain current 120A.
a 40V drain to source voltage (Vdss)
RD3G600GNTL Applications
There are a lot of ROHM Semiconductor
RD3G600GNTL applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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