ROHM RD3G07BATTL1

Manufacturer No:

RD3G07BATTL1

Manufacturer:

ROHM

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) P-Channel 7.1mOhm @ 70A, 10V ±20V 5550 pF @ 20 V 105 nC @ 10 V 40 V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :4581

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

RD3G07BATTL1 Information

ROHM RD3G07BATTL1 technical specifications, attributes, parameters and parts with similar specifications to ROHM RD3G07BATTL1.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package
TO-252

Mfr
Rohm Semiconductor

Package
Digi-Reel?

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V

Power Dissipation (Max)
101W (Ta)

Operating Temperature
150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
P-Channel

Rds On (Max) @ Id, Vgs
7.1mOhm @ 70A, 10V

Vgs(th) (Max) @ Id
2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
5550 pF @ 20 V

Current - Continuous Drain (Id) @ 25°C
70A (Ta)

Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V

Drain to Source Voltage (Vdss)
40 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM RD3G07BATTL1.

RD3G07BATTL1 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5550 pF @ 20 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40 V.