ROHM RCX120N25
Manufacturer No:
RCX120N25
Manufacturer:
ROHM
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Bulk ±30V TO-220-3 Full Pack
Quantity:
In Stock :4063
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RCX120N25 Information
ROHM RCX120N25 technical specifications, attributes, parameters and parts with similar specifications to ROHM RCX120N25.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2013
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Pin Count
- 3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 2.23W Ta 40W Tc
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM RCX120N25.
RCX120N25 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 10.5 mJ.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12A.With a drain-source breakdown voltage of 250V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 250V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 45 ns.Peak drain current for this device is 48A, which is its maximum pulsed drain current.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 180mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 33 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
RCX120N25 Features
the avalanche energy rating (Eas) is 10.5 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 48A.
single MOSFETs transistor is 180mOhm
RCX120N25 Applications
There are a lot of ROHM Semiconductor
RCX120N25 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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12.28 M
Listed Part Number
3,000+
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In-stock SKU
15,000+
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