ROHM R6530ENZC8
Manufacturer No:
R6530ENZC8
Manufacturer:
ROHM
Package:
TO-3P-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel 140m ? @ 14.5A, 10V ±20V 2.1nF @ 25V 90nC @ 10V 650V TO-3P-3 Full Pack
Quantity:
In Stock :1317
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step2：Desiccant Protection
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Step5：Anti-collision Filling
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6530ENZC8 Information
ROHM R6530ENZC8 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6530ENZC8.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3 Full Pack
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Part Status
- Last Time Buy
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Type
- Parameter
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 86W Tc
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- ISOLATED
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
Download datasheets and manufacturer documentation for ROHM R6530ENZC8.
R6530ENZC8 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 730 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.1nF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 30A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 90A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 650V in order to maintain normal operation.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
R6530ENZC8 Features
the avalanche energy rating (Eas) is 730 mJ
based on its rated peak drain current 90A.
a 650V drain to source voltage (Vdss)
R6530ENZC8 Applications
There are a lot of ROHM Semiconductor
R6530ENZC8 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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