ROHM R6530ENXC7G

Manufacturer No:

R6530ENXC7G

Manufacturer:

ROHM

Package:

TO-220-3 Full Pack

Description:

MOSFET (Metal Oxide) N-Channel 140mOhm @ 14.5A, 10V ±20V 2100 pF @ 25 V 90 nC @ 10 V 650 V TO-220-3 Full Pack

Quantity:

In Stock :4623

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

R6530ENXC7G Information

ROHM R6530ENXC7G technical specifications, attributes, parameters and parts with similar specifications to ROHM R6530ENXC7G.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3 Full Pack

Supplier Device Package
TO-220FM

Mfr
Rohm Semiconductor

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
86W (Tc)

Operating Temperature
150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
140mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id
4V @ 960?A

Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C
30A (Ta)

Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V

Drain to Source Voltage (Vdss)
650 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM R6530ENXC7G.

R6530ENXC7G Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2100 pF @ 25 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650 V.