ROHM R6524KNJTL
Manufacturer No:
R6524KNJTL
Manufacturer:
ROHM
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 185m ? @ 11.3A, 10V ±20V 1850pF @ 25V 45nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :1979
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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3. It may cost additional remote fees for delivery if you are in a remote area.
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6524KNJTL Information
ROHM R6524KNJTL technical specifications, attributes, parameters and parts with similar specifications to ROHM R6524KNJTL.
- Type
- Parameter
- Factory Lead Time
- 8 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 245W Tc
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM R6524KNJTL.
Datasheets:
R6524KNJTL Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 654 mJ.The maximum input capacitance of this device is 1850pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 24A.There is no pulsed drain current maximum for this device based on its rated peak drain current 72A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 650V.The drain-to-source voltage (Vdss) of this transistor needs to be at 650V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
R6524KNJTL Features
the avalanche energy rating (Eas) is 654 mJ
based on its rated peak drain current 72A.
a 650V drain to source voltage (Vdss)
R6524KNJTL Applications
There are a lot of ROHM Semiconductor
R6524KNJTL applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
