ROHM R6524ENZC8
Manufacturer No:
R6524ENZC8
Manufacturer:
ROHM
Package:
TO-3P-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel 185m ? @ 11.3A, 10V ±20V 1.65nF @ 25V 70nC @ 10V 650V TO-3P-3 Full Pack
Quantity:
In Stock :4827
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6524ENZC8 Information
ROHM R6524ENZC8 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6524ENZC8.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3 Full Pack
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Part Status
- Last Time Buy
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Type
- Parameter
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 74W Tc
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- ISOLATED
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
Download datasheets and manufacturer documentation for ROHM R6524ENZC8.
R6524ENZC8 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 654 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.65nF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [24A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 72A.The DS breakdown voltage should be maintained above 650V to maintain normal operation.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
R6524ENZC8 Features
the avalanche energy rating (Eas) is 654 mJ
based on its rated peak drain current 72A.
a 650V drain to source voltage (Vdss)
R6524ENZC8 Applications
There are a lot of ROHM Semiconductor
R6524ENZC8 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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