ROHM R6524ENJTL
Manufacturer No:
R6524ENJTL
Manufacturer:
ROHM
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 185m ? @ 11.3A, 10V ±20V 1650pF @ 25V 70nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :8259
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6524ENJTL Information
ROHM R6524ENJTL technical specifications, attributes, parameters and parts with similar specifications to ROHM R6524ENJTL.
- Type
- Parameter
- Factory Lead Time
- 8 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 245W Tc
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM R6524ENJTL.
Datasheets:
R6524ENJTL Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 654 mJ.A device's maximum input capacitance is 1650pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 24A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 72A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 650V.To operate this transistor, you need to apply a 650V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
R6524ENJTL Features
the avalanche energy rating (Eas) is 654 mJ
based on its rated peak drain current 72A.
a 650V drain to source voltage (Vdss)
R6524ENJTL Applications
There are a lot of ROHM Semiconductor
R6524ENJTL applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
