ROHM R6520KNZC8
Manufacturer No:
R6520KNZC8
Manufacturer:
ROHM
Package:
TO-3P-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel 205m ? @ 9.5A, 10V ±20V 1.55nF @ 25V 40nC @ 10V 650V TO-3P-3 Full Pack
Quantity:
In Stock :1668
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6520KNZC8 Information
ROHM R6520KNZC8 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6520KNZC8.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3 Full Pack
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Part Status
- Last Time Buy
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Type
- Parameter
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 68W Tc
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- ISOLATED
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
Download datasheets and manufacturer documentation for ROHM R6520KNZC8.
R6520KNZC8 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 444 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1.55nF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 20A.Pulsed drain current is maximum rated peak drain current 60A.A normal operation of the DS requires keeping the breakdown voltage above 650V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
R6520KNZC8 Features
the avalanche energy rating (Eas) is 444 mJ
based on its rated peak drain current 60A.
a 650V drain to source voltage (Vdss)
R6520KNZC8 Applications
There are a lot of ROHM Semiconductor
R6520KNZC8 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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12.28 M
Listed Part Number
3,000+
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In-stock SKU
15,000+
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