ROHM R6520KNX3C16

Manufacturer No:

R6520KNX3C16

Manufacturer:

ROHM

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel 205mOhm @9.5A, 10V ±20V 1550 pF @ 25 V 40 nC @ 10 V 650 V TO-220-3

Quantity:

In Stock :9244

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step2：Desiccant Protection

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SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

R6520KNX3C16 Information

ROHM R6520KNX3C16 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6520KNX3C16.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3

Supplier Device Package
TO-220AB

Mfr
Rohm Semiconductor

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
220W (Tc)

Operating Temperature
150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
205mOhm @9.5A, 10V

Vgs(th) (Max) @ Id
5V @ 630?A

Input Capacitance (Ciss) (Max) @ Vds
1550 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C
20A (Tc)

Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V

Drain to Source Voltage (Vdss)
650 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM R6520KNX3C16.

R6520KNX3C16 Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1550 pF @ 25 V.Operating this transistor requires a 650 V drain to source voltage (Vdss).