ROHM R6515KNZC17

Manufacturer No:

R6515KNZC17

Manufacturer:

ROHM

Package:

TO-3P-3 Full Pack

Description:

MOSFET (Metal Oxide) N-Channel 315m ? @ 6.5A, 10V ±20V 1.05nF @ 25V 27.5nC @ 10V 650V TO-3P-3 Full Pack

Quantity:

In Stock :9037

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

R6515KNZC17 Information

ROHM R6515KNZC17 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6515KNZC17.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-3P-3 Full Pack

Operating Temperature
150°C TJ

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
MOSFET (Metal Oxide)

Power Dissipation-Max
60W Tc

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
315m ? @ 6.5A, 10V

Vgs(th) (Max) @ Id
5V @ 430?A

Type
Parameter

Input Capacitance (Ciss) (Max) @ Vds
1.05nF @ 25V

Current - Continuous Drain (Id) @ 25°C
15A Tc

Gate Charge (Qg) (Max) @ Vgs
27.5nC @ 10V

Drain to Source Voltage (Vdss)
650V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for ROHM R6515KNZC17.

Datasheets:

rohmsemiconductor-r6515knzc8-datasheets-5816.pdf

R6515KNZC17 Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.05nF @ 25V.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.