ROHM R6515ENZC8
Manufacturer No:
R6515ENZC8
Manufacturer:
ROHM
Package:
TO-3P-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel 315m ? @ 6.5A, 10V ±20V 910pF @ 25V 40nC @ 10V 650V TO-3P-3 Full Pack
Quantity:
In Stock :8859
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6515ENZC8 Information
ROHM R6515ENZC8 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6515ENZC8.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3 Full Pack
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Part Status
- Last Time Buy
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Type
- Parameter
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 60W Tc
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- ISOLATED
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
Download datasheets and manufacturer documentation for ROHM R6515ENZC8.
R6515ENZC8 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 284 mJ.A device's maximum input capacitance is 910pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 15A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 45A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 650V.To operate this transistor, you need to apply a 650V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
R6515ENZC8 Features
the avalanche energy rating (Eas) is 284 mJ
based on its rated peak drain current 45A.
a 650V drain to source voltage (Vdss)
R6515ENZC8 Applications
There are a lot of ROHM Semiconductor
R6515ENZC8 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
