ROHM R6511ENXC7G

Manufacturer No:

R6511ENXC7G

Manufacturer:

ROHM

Package:

TO-220-3 Full Pack

Description:

MOSFET (Metal Oxide) N-Channel 400mOhm @ 3.8A, 10V ±20V 670 pF @ 25 V 32 nC @ 10 V 650 V TO-220-3 Full Pack

Quantity:

In Stock :7275

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

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RFQ (REQUEST FOR QUOTATIONS)

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

R6511ENXC7G Information

ROHM R6511ENXC7G technical specifications, attributes, parameters and parts with similar specifications to ROHM R6511ENXC7G.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3 Full Pack

Supplier Device Package
TO-220FM

Mfr
Rohm Semiconductor

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
53W (Tc)

Operating Temperature
150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
400mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id
4V @ 320?A

Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C
11A (Ta)

Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V

Drain to Source Voltage (Vdss)
650 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM R6511ENXC7G.

R6511ENXC7G Overview

A device's maximal input capacitance is 670 pF @ 25 V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 650 V drain to source voltage (Vdss).