ROHM R6511END3TL1

Manufacturer No:

R6511END3TL1

Manufacturer:

ROHM

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel 400mOhm @ 3.8A, 10V ±20V 670 pF @ 25 V 32 nC @ 10 V 650 V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :6641

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step2：Desiccant Protection

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

R6511END3TL1 Information

ROHM R6511END3TL1 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6511END3TL1.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package
TO-252

Mfr
Rohm Semiconductor

Package
Digi-Reel?

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
124W (Tc)

Operating Temperature
150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
400mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id
4V @ 320?A

Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C
11A (Tc)

Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V

Drain to Source Voltage (Vdss)
650 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM R6511END3TL1.

R6511END3TL1 Overview

A device's maximal input capacitance is 670 pF @ 25 V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 650 V drain to source voltage (Vdss).