ROHM R6509KND3TL1

Manufacturer No:

R6509KND3TL1

Manufacturer:

ROHM

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel 585mOhm @ 2.8A, 10V ±20V 540 pF @ 25 V 16.5 nC @ 10 V 650 V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :7975

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

R6509KND3TL1 Information

ROHM R6509KND3TL1 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6509KND3TL1.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package
TO-252

Mfr
Rohm Semiconductor

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
94W (Tc)

Operating Temperature
150°C (TJ)

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Type
Parameter

Rds On (Max) @ Id, Vgs
585mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id
5V @ 230?A

Input Capacitance (Ciss) (Max) @ Vds
540 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C
9A (Tc)

Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 10 V

Drain to Source Voltage (Vdss)
650 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM R6509KND3TL1.

R6509KND3TL1 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 540 pF @ 25 V.This transistor requires a drain-source voltage (Vdss) of 650 V.