ROHM R6507ENXC7G

Manufacturer No:

R6507ENXC7G

Manufacturer:

ROHM

Package:

TO-220-3 Full Pack

Description:

MOSFET (Metal Oxide) N-Channel 665mOhm @ 2.4A, 10V ±20V 390 pF @ 25 V 20 nC @ 10 V 650 V TO-220-3 Full Pack

Quantity:

In Stock :8599

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step2：Desiccant Protection

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

R6507ENXC7G Information

ROHM R6507ENXC7G technical specifications, attributes, parameters and parts with similar specifications to ROHM R6507ENXC7G.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3 Full Pack

Supplier Device Package
TO-220FM

Mfr
Rohm Semiconductor

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
46W (Tc)

Operating Temperature
150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
665mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id
4V @ 200?A

Input Capacitance (Ciss) (Max) @ Vds
390 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C
7A (Ta)

Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V

Drain to Source Voltage (Vdss)
650 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM R6507ENXC7G.

R6507ENXC7G Overview

A device's maximum input capacitance is 390 pF @ 25 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 650 V drain to source voltage (Vdss).