ROHM R6047ENZ4C13
Manufacturer No:
R6047ENZ4C13
Manufacturer:
ROHM
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel 72m ? @ 25.8A, 10V ±20V 3850pF @ 25V 145nC @ 10V 600V TO-247-3
Quantity:
In Stock :8028
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6047ENZ4C13 Information
ROHM R6047ENZ4C13 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6047ENZ4C13.
- Type
- Parameter
- Factory Lead Time
- 8 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 481W Tc
- Operating Mode
- ENHANCEMENT MODE
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
Download datasheets and manufacturer documentation for ROHM R6047ENZ4C13.
R6047ENZ4C13 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1135 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3850pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 47A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 141A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
R6047ENZ4C13 Features
the avalanche energy rating (Eas) is 1135 mJ
based on its rated peak drain current 141A.
a 600V drain to source voltage (Vdss)
R6047ENZ4C13 Applications
There are a lot of ROHM Semiconductor
R6047ENZ4C13 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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12.28 M
Listed Part Number
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In-stock SKU
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