ROHM R6046FNZC8
Manufacturer No:
R6046FNZC8
Manufacturer:
ROHM
Package:
TO-3P-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Tube 93m ? @ 23A, 10V ±30V 6100pF @ 25V 150nC @ 10V TO-3P-3 Full Pack
Quantity:
In Stock :1031
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6046FNZC8 Information
ROHM R6046FNZC8 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6046FNZC8.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3 Full Pack
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Published
- 2011
- Part Status
- Last Time Buy
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- Capacitance
- -3pF
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Power Dissipation-Max
- 120W Tc
- Element Configuration
- Single
Download datasheets and manufacturer documentation for ROHM R6046FNZC8.
R6046FNZC8 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 142 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6100pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 46A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [230 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 115A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
R6046FNZC8 Features
the avalanche energy rating (Eas) is 142 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 230 ns
based on its rated peak drain current 115A.
R6046FNZC8 Applications
There are a lot of ROHM Semiconductor
R6046FNZC8 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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