ROHM R6035VNXC7G

Manufacturer No:

R6035VNXC7G

Manufacturer:

ROHM

Package:

TO-220-3 Full Pack

Description:

MOSFET (Metal Oxide) N-Channel 114mOhm @ 8A, 15V ±30V 2400 pF @ 100 V 50 nC @ 10 V 600 V TO-220-3 Full Pack

Quantity:

In Stock :1655

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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Step2：Desiccant Protection

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

R6035VNXC7G Information

ROHM R6035VNXC7G technical specifications, attributes, parameters and parts with similar specifications to ROHM R6035VNXC7G.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3 Full Pack

Supplier Device Package
TO-220FM

Mfr
Rohm Semiconductor

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V, 15V

Power Dissipation (Max)
81W (Tc)

Operating Temperature
150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
114mOhm @ 8A, 15V

Vgs(th) (Max) @ Id
6.5V @ 1.1mA

Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 100 V

Current - Continuous Drain (Id) @ 25°C
17A (Tc)

Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V

Drain to Source Voltage (Vdss)
600 V

Vgs (Max)
±30V

Download datasheets and manufacturer documentation for ROHM R6035VNXC7G.

R6035VNXC7G Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2400 pF @ 100 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600 V.