ROHM R6035KNZ4C13

Manufacturer No:

R6035KNZ4C13

Manufacturer:

ROHM

Package:

TO-247-3

Description:

MOSFET (Metal Oxide) N-Channel 102mOhm @ 18.1A, 10V ±20V 3000 pF @ 25 V 72 nC @ 10 V 600 V TO-247-3

Quantity:

In Stock :4702

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Shipped from：HK Warehouse

Expected Shipping：Sat, May 30 - Sun, May 31, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

R6035KNZ4C13 Information

ROHM R6035KNZ4C13 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6035KNZ4C13.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-247-3

Supplier Device Package
TO-247

Mfr
Rohm Semiconductor

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
379W (Tc)

Base Product Number
R6035

Operating Temperature
150°C (TJ)

Type
Parameter

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
102mOhm @ 18.1A, 10V

Vgs(th) (Max) @ Id
5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C
35A (Tc)

Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V

Drain to Source Voltage (Vdss)
600 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM R6035KNZ4C13.

R6035KNZ4C13 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3000 pF @ 25 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600 V.