ROHM R6035ENZM12C8

Manufacturer No:

R6035ENZM12C8

Manufacturer:

ROHM

Package:

TO-3P-3 Full Pack

Description:

MOSFET (Metal Oxide) N-Channel 102m ? @ 18.1A, 10V ±20V 2.72nF @ 25V 110nC @ 10V 600V TO-3P-3 Full Pack

Quantity:

In Stock :8258

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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Step2：Desiccant Protection

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Step4：Individual Package

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

R6035ENZM12C8 Information

ROHM R6035ENZM12C8 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6035ENZM12C8.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-3P-3 Full Pack

Operating Temperature
150°C TJ

Part Status
Last Time Buy

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
MOSFET (Metal Oxide)

Power Dissipation-Max
120W Tc

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
102m ? @ 18.1A, 10V

Vgs(th) (Max) @ Id
4V @ 1mA

Type
Parameter

Input Capacitance (Ciss) (Max) @ Vds
2.72nF @ 25V

Current - Continuous Drain (Id) @ 25°C
35A Tc

Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V

Drain to Source Voltage (Vdss)
600V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for ROHM R6035ENZM12C8.

Datasheets:

rohmsemiconductor-r6035enzc17-datasheets-5760.pdf

R6035ENZM12C8 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2.72nF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.