ROHM R6035ENZ1C9
Manufacturer No:
R6035ENZ1C9
Manufacturer:
ROHM
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 102m ? @ 18.1A, 10V ±20V 2720pF @ 25V 110nC @ 10V 600V TO-247-3
Quantity:
In Stock :4288
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6035ENZ1C9 Information
ROHM R6035ENZ1C9 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6035ENZ1C9.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Published
- 2014
- Part Status
- Last Time Buy
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 120W Tc
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM R6035ENZ1C9.
Datasheets:
R6035ENZ1C9 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 796 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2720pF @ 25V.This device has a continuous drain current (ID) of [35A], which is its maximum continuous current.A maximum pulsed drain current of 105A is the maximum peak drain current rated for this device.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
R6035ENZ1C9 Features
the avalanche energy rating (Eas) is 796 mJ
a continuous drain current (ID) of 35A
based on its rated peak drain current 105A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
R6035ENZ1C9 Applications
There are a lot of ROHM Semiconductor
R6035ENZ1C9 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
