ROHM R6030KNXC7
Manufacturer No:
R6030KNXC7
Manufacturer:
ROHM
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel 130m ? @ 14.5A, 10V ±20V 2350pF @ 25V 56nC @ 10V 600V TO-220-3 Full Pack
Quantity:
In Stock :9395
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6030KNXC7 Information
ROHM R6030KNXC7 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6030KNXC7.
- Type
- Parameter
- Factory Lead Time
- 18 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Published
- 2015
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 86W Tc
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- ISOLATED
Download datasheets and manufacturer documentation for ROHM R6030KNXC7.
R6030KNXC7 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 636 mJ.A device's maximal input capacitance is 2350pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 30A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 80A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
R6030KNXC7 Features
the avalanche energy rating (Eas) is 636 mJ
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
R6030KNXC7 Applications
There are a lot of ROHM Semiconductor
R6030KNXC7 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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